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Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films  
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【英文篇名】 Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films
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【英文作者】 HAN Chunlong1; LI Juan2 (1. Zhong Huan System Engineering Co.; Ltd; Tianjin 300060; CHN; 2. Institute of Photo-electronics; Nankai University; Tianjin 300071; CHN);
【文献出处】 Semiconductor Photonics and Technology , 半导体光子学与技术(英文版), 编辑部邮箱 2010年 04期  
期刊荣誉:CJFD收录刊
【中文关键词】 c-Si; attributed; uniformity; anisotropy; contamination; perpendicular; reasons; crystalline; H; Films; amorphous; modulated;
【英文关键词】 μc-Si∶H thin film; micro-structure; anisotropy; electrical property;
【摘要】 Structural un-uniformity and electrical anisotropy of μc-Si∶H film are investigated in this paper. It is found that the structure of μc-Si∶H film along the direction perpendicular to the substrate is not uniform, which is modulated by film thickness. In addition, there is a dark conductivity anisotropy along the direction parallel(σ∥) and perpendicular(σ⊥)to the substrate in μc-Si∶H film. The reasons for such an property of μc-Si∶H film and the effect of oxygen contamination are analyzed.
【英文摘要】 Structural un-uniformity and electrical anisotropy of μc-Si∶H film are investigated in this paper. It is found that the structure of μc-Si∶H film along the direction perpendicular to the substrate is not uniform, which is modulated by film thickness. In addition, there is a dark conductivity anisotropy along the direction parallel(σ∥) and perpendicular(σ⊥)to the substrate in μc-Si∶H film. The reasons for such an property of μc-Si∶H film and the effect of oxygen contamination are analyzed.
【更新日期】 2011-03-04
【分类号】 TN304.2
【正文快照】 1 Introduction As one of the promising materials,microcrystalline silicon(μc-Si∶H)has been applied in many thin film devices,such as thin film transistors(TFTs)and solar cells[1-3].To be used in different devices, different structural and electrical pro

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工业技术
  无线电电子学、电信技术
   半导体技术
    一般性问题
     材料
      化合物半导体
  
 
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