【作者】 赵安捷； 骆祥； 张勇；

【Author】 Anjie Zhao;Xiang Luo;Yong Zhang;School of Electronic Science and Engineering,University of Electronic Science and Technology of China;

【机构】 电子科技大学电子科学与工程学院；

【摘要】 本文基于太赫兹单片集成电路(TMIC)技术,设计了一款340GHz二倍频器。采用氮化镓(GaN)肖特基二极管(SBD)以提升功率容量,并引入屏蔽微带线结构,优化热管理性能。使用SBD自热模型的仿真结果表明,在-9V偏置下,倍频器在500mW输入时最高效率为11.0%,1200mW输入时最高效率为9.0%,最高输出107.6mW。屏蔽微带线大幅增加了基片与腔体的接触面积,在高功率输入时表现出明显的散热优势,对比使用悬置微带线的倍频器温度降低89K。更多还原

【Abstract】 This paper presents the design of a 340 GHz frequency doubler based on Terahertz Monolithic Integrated Circuit(TMIC) technology. The proposed design incorporates Gallium Nitride(GaN) Schottky Barrier Diodes(SBDs) to enhance power handling capability and introduces a shielded microstrip line structure to optimize thermal management performance.Simulation results based on the SBD self-heating model demonstrate that the doubler achieves a maximum efficiency of 11.0% at 500mW input power and 9.0% at 1200mW input power under a-9 V bias, with a maximum output power of 107.6mW. The shielded microstrip line significantly increases the contact area between the substrate and the cavity, exhibiting superior thermal dissipation performance under high-power input conditions. Compared to a conventional design using suspended microstrip lines, the proposed structure achieves a remarkable temperature reduction of 89K.更多还原