【作者】 赵哲言； 魏碧华；

【Author】 Zhao Zheyan;Wei Bihua;The 13th Research Institute of China Electronic Technology Corporation;

【机构】 中国电子科技集团公司第十三研究所；

【摘要】 本文通过分析器件在夹断和开启状态下的栅源电容Cgs和栅漏电容Cgd随偏置变化的趋势,建立了由Verilog-A语言描述的改进非线性电容模型,嵌入到传统EEHEMT模型中以替代原有的电荷模型。对该模型进行了C-V特性、多偏置S参数以及负载牵引测试验证,结果表明本文提出的GaAs pHEMT器件大信号模型仿真与实测数据吻合较好,能够满足GaAs工艺功率放大器设计需求。更多还原

【Abstract】 This paper analyzes the trend of the gate-source capacitance(C_gs) and gate-drain capacitance(C_gd) of the device in the ON-state and pinch-off state with the bias voltage,consequently establishes an improved capacitance model using Verilog-A code, and embeds it into the traditional EEHEMT model to replace the original charge model. This model is verified using C-V, multi-bias S-parameters, load-pull measurements. The simulation result proves that this large signal model for GaAs pHEMT is in good agreement with the measured data, meeting the demand for the GaAs power amplifier.更多还原