【作者】 李岳峻； 刘忠雨； 马磊； 王超； 李自强； 陈星； 田野；

【Author】 LI Yue-jun;LIU Zhong-yue;MA Lei;WANG Chao;LI Zi-qiang;CHEN Xing;TING Ye;School of Mechanical and Electrical Engineering, Henan University of Technology;School of Materials Science and Engineering, Henan University of Technology;Ginkgo Semiconductor Co., Ltd;

【机构】 河南工业大学机电工程学院； 河南工业大学材料科学与工程学院； 憬宏半导体(广东横琴)有限公司；

【摘要】 三维IC封装需要微互连点向高密度化发展,致使其尺度连续缩减,导致其可靠性面临难题。本文主要研究Cu-x wt%Ni/Sn界面IMC生长行为和形貌演变规律,并将其应用于三维封装全IMC微互连点制备。结果发现:随着Ni含量增加,界面IMC生长呈先快速而后减慢的趋势,伴随着IMC晶粒尺度连续大幅度缩减,形貌由巨大的扇贝状快速转变成细小的棱柱状。其形貌和生长的转变与Ni能细化IMC晶粒和促进IMC形核有关。构建出CuNi6/（15μm）Sn/CuNi6互连结构,通过瞬时液相键合法,超快速形成全（Cu,Ni）₆Sn₅互连点,比Cu₆Sn₅互连点的形成快近30倍,且具有单相、高温及晶体结构稳定特点。研发的微互连点有望解决三维IC封装互连难题,也适用于第三代大功率半导体封装互连新材料的"低温键合"和"高温服役"需要。更多还原

【Abstract】 Three-dimensional integrated circuit（3D IC） packaging demands higher-density micro-interconnections, which necessitates continuous downscaling of their dimensions and consequently raises reliability challenges. This study investigates the growth behavior and morphological evolution of interfacial intermetallic compounds（IMCs） in Cu-x wt.% Ni/Sn systems, and applies the findings to the fabrication of full-IMC micro-interconnections for 3D packaging. The results reveal that with increasing Ni content, IMC growth initially accelerates and then slows down, accompanied by a continuous and substantial reduction in grain size. The IMC morphology rapidly transforms from large scallop-shaped grains to fine prismatic structures. This transition in growth rate and morphology is attributed to the grain-refining effect of Ni and its promotion of IMC nucleation. By constructing a CuNi6/（15 μm）Sn/CuNi6 interconnection structure and employing transient liquid-phase bonding, full（Cu, Ni）₆Sn₅ joints were formed at an ultrafast rate-nearly 30 times faster than that of Cu₆Sn₅ joints-while exhibiting single-phase composition, high-temperature stability, and a robust crystal structure. The developed microinterconnections offer a promising solution to the reliability challenges in 3D IC packaging and are also suitable for "low-temperature bonding" and "high-temperature service" requirements in thirdgeneration high-power semiconductor packaging.更多还原