【作者】 马武英； 姚志斌； 何宝平； 陈伟； 王祖军； 缑石龙； 薛院院； 董观涛；

【Author】 Ma Wu-Ying;Yao Zhi-Bin;He Bao-Ping;Wang Zu-Jun;Gougou-Shi-long;Dong Guan-Tao;Xue Yuan-Yuan;Northwest institute of Nuclear Technology;State key laboratory of intense pulsed radiation simulation and effect;

【机构】 西安交通大学； 强脉冲辐射环境模拟与效应国家重点实验室； 西北核技术研究所；

【摘要】 以40nm-n型金属氧化物半导体场效应晶体管(NMOSFET)为研究载体,探索了其总剂量效应与热载流子效应之间的耦合机制。分别对试验载体进行了先热载流子注入后辐照试验,以及先辐照后热载流子注入试验。辐照试验在开态偏置条件下利用10keV-x射线源进行。试验结果表明:先辐照后热载流子试验时,器件最终表现出的敏感参数是阈值电压的漂移,其敏感位置是栅氧化层,辐照导致的关态漏电流增加Ioff在随后应力试验过程中发生恢复;而先热载流子后辐照试验时,最终表现的敏感参数为关态漏电流Ioff,隔离氧化层STI是辐射敏感位置,热载流子导致的阈值电压正向漂移量,在随后的总剂量试验过程中发生恢复。论文给出了辐射与可靠性耦合潜在物理规律和机制。更多还原

【Abstract】 The coupling mechanism between total dose effect and hot carrier effect of 40 nm-n metal oxide semiconductor field effect transistor(nMOSFET) was investigated.Hot carrier injection followed by irradiation and irradiation followed by hot carrier injection were carried out.The experimental samples were irradiated by 10 kev-x-ray source under the condition of open bias.The experimental results show that:when the hot carrier test is conducted after irradiation,the final sensitive parameter of the device is the drift of the threshold voltage,and the sensitive position is the gate oxide layer.The off state leakage current(Ioff) increase caused by irradiation recovers during the subsequent stress test;while when the hot carrier test is conducted before the total dose irradiation test,the final sensitive parameter of the device is the Ioff.The STI of the isolated oxide layer is the radiation sensitive position,and the threshold voltage positive drift caused by hot carriers recovers during the subsequent radiation process.The potential physical laws and mechanisms of radiation reliability coupling are given.更多还原