【作者】 文进才； 贾钧浩； 王旭； 孙玲玲；

【Author】 Jincai Wen;Junhao Jia;Xu Wang;Lingling Sun;Hangzhou Dianzi University;

【机构】 杭州电子科技大学；

【摘要】 论文研究了适合于非对称全数字多波束阵列应用的多通道毫米波收发信机架构方式,并基于65nm CMOS工艺开展了40GHz频段功率放大器和低噪声放大器等关键电路芯片设计。其中,功率放大器在40GHz时实现了13.6d Bm的输出1d B压缩功率和20.4%的功率附加效率,低噪声放大器实现了最高20d B的小信号增益和10GHz的3d B带宽,为实现多通道毫米波硅基收发芯片提供了基础。更多还原

【Abstract】 This paper studies the architecture of multi-channel millimeter wave transceiver suitable for the application of asymmetric all digital multi beam-forming array, and the key circuit chips such as 40 GHz band power amplifier and low noise amplifier are designed based on 65 nm CMOS technology. The power amplifier achieves 13.6 dBm of output 1 dB compressed power and 20.4% of power added efficiency at 40 GHz. The low noise amplifier achieves the maximum 20 dB small signal gain and 10 GHz of 3 dB bandwidth. related work provides the basis for the realization of multi-channel millimeter wave silicon transceiver chip.更多还原