【作者】 肖跃格； 徐军； 岳震； 张翊； 崔晓冬；

【Author】 Yuege Xiao;Jun Xu;Zhen Yue;Yi Zhang;Xiaodong Cui;School of Physics, University of Electronic Science and Technology;

【机构】 电子科技大学物理学院；

【摘要】 本文主要介绍了一种基于国产氮化镓衬底(GaN HEMT)的大功率内匹配放大器。该放大器采取多子胞管芯结构来分散管芯热量分布,通过多胞管芯合成技术,再结合小信号仿真和大信号功率扫描以及频率响应仿真对电路的稳定性、增益线性度和附加功率效率等参数进行了优化,实现了在X波段的宽脉冲大功率输出。通过仿真和实验证明,在9.5～10.5GHz频频率范围内,该放大器的输出功率大于250W,同时实现35%的功率附加效率和大于8dB的功率增益。更多还原

【Abstract】 A high-power internal matching amplifier based on domestic gallium nitride substrate(GaN HEMT) is introduced in this paper. A multi-cell structure was utilized in this amplifier to disperse heat distribution of tube core. The stability and gain linearity of the circuit are optimized through small-signal, large-signal power sweep and frequency response simulation. Utilizing the multi-cell synthesis technology, the power added efficiency(PAE) is improved, and the wide pulse high power output in the X-band is realized. Simulation and measurement results show that the amplifier can output more than 250 W of power, featuring power added efficiency of 35% and gain better than 8 dB from 9.5 to 10.5 GHz.更多还原