【作者】 王祖军； 薛院院； 陈伟； 宁浩； 徐瑞； 郭晓强； 姚志斌； 马武英； 何宝平； 董观涛；

【Author】 WANG Zu-jun;XUE Yuan-yuan;CHEN Wei;NING Hao;XU Rui;GUO Xiao-qiang;YAO Zhi-bin;MA Wu-ying;HE Bao-ping;DONG Guan-tao;Northwest Institute of Nuclear Technology,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect;School of Materials Science and Engineering,Xiangtan University;

【机构】 西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室； 湘潭大学材料科学与工程学院；

【摘要】 开展了中国散裂中子源(CSNS)白光中子辐照CMOS图像传感器(CIS)的实验研究。白光中子的能量范围涵盖1 eV～200 MeV的宽广能谱。本次实验中,CIS的中子辐照注量率约为1.4×10~6n/(cm~2·s)。分析了白光中子辐照CIS诱发位移损伤的实验规律,获得了中子位移损伤诱发产生二阶和多阶随机电报噪声(RTS)的实验规律;揭示了位移损伤诱发CIS暗信号增大、暗信号不均匀性(DSNU)增大、暗信号尖峰和RTS产生的物理机制。通过实时采集中子在线辐照CIS时的暗场图像数据,分析了白光中子辐照CIS诱发的单粒子瞬态响应特征规律,揭示了单粒子瞬态诱发CIS暗信号尖峰和亮线产生的物理机制。更多还原

【Abstract】 The experiments of the CMOS image sensors(CISs) at back-streaming white neutrons(Back-n) in China Spallation Neutron Source(CSNS) were carried out.The neutron energy spectrum at Back-n in CSNS ranges from 1 eV to 200 MeV.The neutron flux is about 1.4×10~6 n/(cm~2·s) in these radiation experiments.The displacement damages in the CISs induced by neutron radiation are analyzed.The two-level and multi-level random telegraph signal(RTS) behaviors induced by neutron displacement radiation are presented.The mechanisms of the increase of dark signal and dark signal non-uniformity,and the occurrences of dark signal spike and RTS induced by neutron displacement radiation are demonstrated.The single particle transient response characterizations are described by analyzing the online dark images during neutron radiation.The mechanisms of the dark signal spikes and the white lines induced by the single transient neutron events are also demonstrated.The research provides the basis of the theories and experimental techniques for radiation hardening and space radiation damage evaluation of the CISs.更多还原