【作者】 权晶晶； 秦冬冬； 李洋； 王秋红； 贺彩花； 卢小泉；

【Author】 Jingjing Quan;Dongdong Qin;Yang Li;Qiuhong Wang;Caihua He;Xiaoquan Lu;Key Lab of Bioelectrochemistry and Environmental Analysis of Gansu, College of Chemistry and Chemical Engineering, Northwest Normal University;

【机构】 甘肃省生物电化学与环境分析重点实验室西北师范大学化学化工学院；

【摘要】 通过高温热聚合和化学气相沉积（CVD）方法相结合,合成了磷掺杂的石墨相氮化碳薄膜。首先通过高温热聚合的方法,在导电基底FTO上生长了石墨相氮化碳薄膜,再将生长有氮化碳薄膜的基底放置在管式炉中,并以次亚磷酸钠作为磷源在低温氮气保护下进行热处理就可以得到非金属磷元素掺杂的石墨相氮化碳薄膜（P-g-C₃N₄）。g-C₃N₄作为一种非金属有机半导体材料其禁带宽度Eg约为2.7 eV,最大光吸收波长在460 nm,由于其对环境无毒无害,有较好的化学稳定性,所以受到了人们的青睐。但是由于石墨相氮化碳对可见光的捕获有限,表面积小,光生载流子复合严重等问题所以限制了其应用。所以通过掺杂非金属有助于进一步提高其光催化性能。更多还原

【Abstract】 In this paper, the P-doped graphite phase carbon nitride thin films have been synthesized by combining the method of high temperature thermal polymerization and CVD.First of all, we prapared carbon nitride thin films on FTO by thermal polymerization method.Then, putting it into the tube furnace and making sodium hypophosphite as phosphorus source.At last, the P-doped graphite phase carbon nitride thin films can be prepared successfully.Since graphite phase carbon nitride is a kind of organic semiconductor materials and the band gap is about 2.7 eV with the maximum absorption wavelength 460 nm.The properities of no harm to the environment and have better chemical stability making it becoming more popular.However, the defect of limited light capture and the small specific surface area restricted the application.So by doping non-metal to help further improve its photocatalytic performance.更多还原