【作者】 许洪光； 邓晓娇； 卢胜杰； 郑卫军；

【Author】 Hong-Guang Xu;Xiao-Jiao Deng;Sheng-Jie Lu;Wei-Jun Zheng;Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences;

【机构】 中国科学院化学研究所分子反应动力学国家重点实验室；

【摘要】 金属掺杂的半导体团簇,在纳米材料、微电子技术等领域中有着重要的应用前景。在半导体团簇中掺杂金属原子,有助于稳定其笼状结构,同时掺杂能改变半导体团簇的性质,获得一些具有特殊性质的材料。我们通过激光溅射方法制备金属（如V,Cr,Cu,Ag,Au等）掺杂的硅、锗半导体团簇,采用飞行时间质谱、光电子能谱结合量子化学计算研究它们的电子结构和物理化学性质,并从中寻找超常稳定的特殊团簇。我们的研究发现了最小富勒烯笼状结构V2@Si20,具有亚铁磁性的轮式结构V₃Si₁₂和高对称性二十面体的AuGe₁₂等具有新颖结构和性质的团簇。诸如这些特殊团簇的发现能为制备半导体纳米管以及团簇组装的新材料提供重要参考。更多还原

【Abstract】 Semiconductor clusters doped with metal atoms have potential applications in nanomaterials and microelectronics. Doping metal atoms into semiconductor clusters can stabilize cage structures of these clusters and modulate the physical chemical properties of these clusters, therefore, can produce materials with novel properties. We generate metal-doped semiconductor by the laser ablation source, and investigate their structures and properties using time-of-flight mass spectrometry and photoelectron spectroscopy combined with quantum chemistry calculations. Our studies found several clusters with novel structures and properties, such as the smallest fullerene-like silicon cage V₂@Si₂₀, the wheel-like structure V₃Si₁₂ with ferromagnetic properties, and the I_h symmetric icosahedral structure Au@Ge₁₂. These findings for novel clusters will provide valuable information for the development of semiconductor nanotubers and self-assembled functional materials.更多还原