【作者】 赵鹏飞； 汤庆鑫； 童艳红； 刘益春；

【Author】 Pengfei Zhao;Qingxin Tang;YanhongT ong;Yichun Liu;Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University;

【机构】 东北师范大学紫外光发射材料与技术教育部重点实验室；

【摘要】 传统的石墨烯纳米带场效应晶体管在剥离纳米带和器件制备过程中都涉及湿处理。于是我们提出了一种简单、新颖的无溶液法制备石墨烯纳米带及其场效应晶体管,我们分别采用金膜和SnO₂纳米带作为掩膜来沉积电极和制备石墨烯纳米带,并通过金膜和SnO₂纳米带尺寸来控制沟道长、宽。在大气环境中,宽度为330nm的石墨烯纳米线表现出明显的双极性特性,空穴和电子的迁移率高达904和703cm²V^-1s^-1。我们将上述结果归功于全干法制备石墨烯纳米带及其器件。更多还原

【Abstract】 Conventional graphene nanoribbon（GNR） field-effect transistor（FET） fabrication involved the wetprocess with the separated nanoribbon formation and device fabrication. Here, we demonstrate onesimple and novel non-solution method to integrate the GNR formation and the FET fabrication, where agold film is used as mask for electrode deposition, following by using a SnO₂ nanoribbon as mask for theformation of GNR. The channel length and width can be controlled by the widths of the gold film andthe SnO₂ nanoribbon, respectively. It is found that the GNR with the width up to 330 nm presents thepromising ambipolar field-effect properties in air ambient, the hole and electron mobilities arerespectively as high as 904 and 703 cm²V^-1s^-1, which benefits from the all dry process for both GNRfabrication and device fabrication.更多还原