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高开关比柔性有机单晶场效应晶体管

Flexible and High ON/OFF ratio Single Crystal Field-effect Transistors

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【作者】 周淑君汤庆鑫童艳红田洪坤耿延候刘益春

【Author】 Shujun Zhou;Qingxin Tang;Yanhong Tong;Hongkun Tian;Yanhou Geng;Yichun Liu;Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University;State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences;

【机构】 东北师范大学紫外光发射材料与技术教育部重点实验室中国科学院长春应用化学研究所

【摘要】 场效应迁移率和开关比是评估有机场效应晶体管最重要的两个参数。我们在OTS修饰的SiO2绝缘层上制备了Ph5T2有机单晶器件,在小的栅压扫描范围(<45V)就能获得108的超高开关比,整个测试流程在大气和室温条件下进行。这主要是由于分子设计降低了关态电流,绝缘层修饰提高了开态电流所导致的。Ph5T2单晶器件制备在柔性绝缘层和衬底上,经过200次反复的弯曲和恢复器件仍具有很好的稳定性。这种新型多环超薄有机单晶展示出了它们在电子器件上潜在的应用前景。

【Abstract】 The high ON/OFF ratios of organic single crystal field-effect transistors(FETs) are obtained based on dinaphtho[3,4-d:3,4’-d]benzo[1,2-b:4,5-b]dithiophene(Ph5T2) ultrathin microplates. The ON/OFF ratio is over 108 with a small sweep range of gate voltage(<45 V) in air at room temperature when the dielectric is modified with octadecyltrichlorosilane(OTS). The high ON/OFF ratio is related to the decreased off-state current by molecular design and the increased on-state current by dielectric modification. The ultrathin Ph5T2 single crystal provides stable performance even though the flexible device experiences a bending/recovering test for 200 times. The high ON/OFF ratio combined with the high mobility up to 0.51 cm2V-1s-1 and the good flexibility of the ultrathin organic single crystals show their promising potential in electronic applications.

【关键词】 柔性有机单晶场效应晶体管高开关比
  • 【会议录名称】 中国化学会第30届学术年会摘要集-第四十一分会:纳米材料与器件
  • 【会议名称】中国化学会第30届学术年会-第四十一分会:纳米材料与器件
  • 【会议时间】2016-07-01
  • 【会议地点】中国辽宁大连
  • 【分类号】TN386
  • 【主办单位】中国化学会
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