【作者】 张绪德； 唐璞； 张华； 严胜利；

【Author】 ZHANG Xude;TANG Pu;ZHANG Hua;YAN Shengli;University of Electronic Science and Technology of China;

【机构】 电子科技大学；

【摘要】 X波段射频电路在微波领域应用广泛,设计X波段的宽带高增益的低噪声放大器具有重要的意义。本设计采用NEC公司的NE3210S01芯片,此芯片在工作波段能正常工作,而且具有很低噪声。板材使用Rogers5880,介电常数为2.2,厚度为0.508mm,为了达到高增益使用微带三级级联方式,输入;输出;级间采用耦合微带线作为隔直电容,直流偏置采用双电源供电。应用ADS软件进行设计仿真与优化,用protel99se进行版图设计,最后设计出带宽在9~11GHz,增益在33.5d B,增益平坦度在1.5d B,噪声系数小于1d B,驻波比小于2。更多还原

【Abstract】 X-band RF circuits are widely used in microwave applications, Design of X-band broadband high-gain low-noise amplifier is of great significance. The design uses NEC’s NE3210S01 chip, This chip can work in the working band, But also with very low noise, Plate using Rogers5880, The dielectric constant is 2.2, The thickness is 0.508 mm, In order to achieve high gain using microstrip cascade, input; Output; Inter-stage coupling between the microstrip line as a direct capacitor, Direct current bias with dual power supply. Application of ADS software to design simulation and optimization, With protel99 se layout design, Finally, the design bandwidth in 9 ~ 11 GHz, Gain at 33.5d B, Gain flatness at 1.5d B, The noise figure is less than 1d B, The standing wave ratio is less than 2.更多还原