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大电流GaAs光导开关工作特性研究
Operating Characteristics of High Current GaAs PCSS
【作者】 姜苹; 谢卫平; 刘宏伟; 袁建强; 王凌云; 马勋; 丁胜;
【Author】 JIANG Ping;XIE Wei-ping;LIU Hong-wei;YUAN Jian-qiang;WANG Ling-yun;MA Xun;DING Sheng;Institute of Fluid Physics,CAEP;
【机构】 中国工程物理研究院流体物理研究所中物院脉冲功率科学与技术重点实验室;
【摘要】 光导开关作为一种新型固体开关,具有闭合时间短(ps量级)、时间抖动小、重复频率高、功率容量大、光电隔离等优势,脉冲功功率技术研究领域受到广泛关注。实验研究表明,光导开关性能与工作电压、导通电流、触发激光参数、重复频率、工作环境及开关制作工艺等诸多因素密切相关,寿命差异从几百次至几十亿次不等。为了研究在较大导通电流下的开关特性,获得了开关电阻特性随工作发次的变化关系,为开关寿命提升奠定了实验基础。
【Abstract】 Photoconductive semiconductor switch( PCSS) has been widely investigated due to its advantages over conventional switches. Experiments show that characteristics of Ga As PCSS is closely related to various parameters such as working voltage, conduction current, triggering light, repetitive frequency, ambient environment and manufacturing procedures. Working life varies from several hundred times to a billion times under different circumstances. Ga As Photoconductive Semiconductor Switches(PCSS) with peak current over 2.42 k A has been developed and tested. Degradation of Ga As PCSS is observed during working. Results show that peak conduction current is found to decrease with working shots, and dark resistance changes with working shots too.
【Key words】 GaAs; photoconductive semiconductor switch; peak current; dark resistance;
- 【会议录名称】 2014年全国电磁兼容与防护技术学术会议论文集(上)
- 【会议名称】2014年全国电磁兼容与防护技术学术会议
- 【会议时间】2014-07-21
- 【会议地点】中国湖南常德
- 【分类号】TM564
- 【主办单位】中国电子学会微波分会、中国工程物理研究院复杂电磁环境科学与技术重点实验室、总装备部电磁兼容及防护技术专业组、天线与微波技术重点实验室