【作者】 庄华宝； 高海军； 孙玲玲；

【Author】 Zhuang Hua-Bao;Gao Hai-Jun;Sun Ling-Ling;Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University;

【机构】 杭州电子科技大学射频电路与系统教育部重点实验室；

【摘要】 本文分析了一种源简并电感共源共栅低噪声放大器的噪声优化方法。分析指出在共源管的栅源级加上一个电容不仅可以有效地降低噪声,而且降低源极电感减小了版图面积。但是理论公式计算所需电容值需要考虑各种物理参数,对于电路设计者来说比较繁琐。本文通过电感建模,得到电感感值与内径关系数学表达式。再经过理论计算得到电路所有器件参数,最后运用cadence软件扫描电感内径可以同时得到多组输入输出已经匹配的低噪声放大器各项性能指标。观察仿真图形可以得到噪声系数最低时所需电容值。更多还原

【Abstract】 A noise optimization method for inductively degenerated low noise amplifier was presented in this paper.It was analyzed that putting a capacitor between the gate and the source of the common source input FET can not only reduce the noise,but also reduce layout area of the integrated gate inductor.It is cumbersome for the circuit designer to calculate the capacitor value based on the theoretical formulas since many physical parameters are required and the formulas themselves are complicated.Through inductor modeling,we can get the mathematical expression of the inductance by the inner diameter of the gate inductor.Then we get all other device parameter through theoretical calculation.Finally the inner diameter of the gate inductor is scanned and multiple sets of performance of the low noise amplifier are got with the input and output been matched.The desired capacitance value can be easily observed when the noise figure is lowest.更多还原