【作者】 任海振； 葛向红； 杨林峰；

【Author】 Ren Haizhen;Ge Xianghong;Yang Linfeng;Department of Physics, College of Science, Zhongyuan University of Technology;

【机构】 中原工学院物理系；

【摘要】 实际制备的不同密度的碳纳米管的发射电流密度有很大的区别,因此需要一种可行的方法来确定其最佳的密度。本文利用有限元的方法对碳纳米管的表面电场强度进行了数值模拟,计算了碳纳米管一维阵列在不同间距下的场发射电流。通过计算发现,在碳纳米管一维阵列中当碳纳米管之间的间距小于碳纳米管高度的三倍时,碳纳米管之间的场屏蔽效应随距离的增加而迅速衰减;当间距大于高度的三倍时,场屏蔽效应随距离的增加而非常缓慢的降低。在碳纳米管一维阵列中当碳纳米管之间的间距等于碳纳米管高度的三倍时,碳纳米管阵列的场发射电流密度最大。更多还原

【Abstract】 There is big difference in the field emission current density of carbon nanotube(CNT) with different density fabricated by the same technology, so we need a reliable method to determine the optimal density of CNT.we use the finite element method(FEM) to numerically simulate the surface electric field intensity of CNT in this work, and calculate the field emission current of a CNT line at different intertube distances.Based on our calculation, we find that the field screening effect decrease rapidly with the increase of intertube distance when the intertube is smaller than three times of the height of CNT; and when the intertube distance is beyond three times of the CNT height, the field screening effect is found to be decrease very slowly with the increase of the intertube distance.The field emission current density is predicated to be maximized when the intertube distance is three times of the height of CNT in a line.更多还原