【作者】 刘晓明； 谢晓梅； 陈焕辉； 曾光； 韩家升； 郝晓红； 黎业飞； 朱钟淦；

【Author】 LIU Xiao-ming;XIE Xiao-mei;CHEN Huan-hui;ZENG Guang;HAN Jia-sheng;HAO Xiaohong;LI Ye-fei;ZHU Zong-gan;University of Electronic Science and Technology of China;

【机构】 电子科技大学；

【摘要】 高阻硅基底X波段阵列式微带天线的电性能与其结构几何尺寸密切相关。现有的MEMS加工工艺会产生制造误差。为了有效地控制加工误差,以及为加工工艺提供加工精度参考,本文通过HFSS软件分别对高阻硅腹背面方形池深槽刻蚀深度、辐射贴片中心偏移和辐射贴片电镀厚度的误差对天线的电压驻波比、回波损耗和增益的影响进行了仿真分析。仿真分析表明,深槽刻蚀深度是影响天线电性能指标的关键尺寸,在加工过程中深槽刻蚀深度误差应控制在±9μm内,相对误差为4%。最后,建立了深槽刻蚀深度与电压驻波比之间的函数关系,得到反演规律。结合加工样品的电性能测试数据,验证了反演规律对天线的实际尺寸进行预测的可行性。更多还原

【Abstract】 The electrical performance of X-band array microstrip antenna based on high-resistivity silicon substrate is closely related to its geometrical parameters.Error will be produced in the process of MEMS(Micro-Electro-Mechanical System) fabrication.To control the processing tolerance and provide some reference for microfabrication precision,the effects of the etching depth of the high-resistivity silicon back cavity,the center offset of the radiation patch and the electroplating thickness of the radiation patch on the electrical parameters,including voltage standing wave ratio,return loss and gain,are simulated via HFSS software.The numerical analysis indicates that the etching depth of the high-resistivity silicon back cavity is critical factor.The absolute and relative tolerances should be in the region of ± 9μm and 4.00%.The inversion-law between the etching depth and the voltage standing wave ratio is established.In combination with the measured electrical parameter for the sample,the antenna’s geometrical parameter is predicted via the inversion-law and the feasibility of the inversion-law is tested..更多还原