【作者】 刘敏波； 姚志斌； 黄绍艳； 何宝平； 盛江坤；

【Author】 LIU Min-bo;YAO Zhi-bin;HUANG Shao-yan;HE Bao-ping;SHENG Jiang-kun;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology;

【机构】 西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室；

【摘要】 针对辐照前高温老练(Burn-in)影响SRAM器件的抗总剂量辐射能力问题,进行了实验研究。选取了3种不同工艺尺寸SRAM存储器,利用60 Co放射源对经过高温老炼和不经过高温老炼(No Burnin)的样品进行了总剂量辐照实验,测量了辐照引起的SRAM器件的数据位翻转数,得到了Burn-in对不同工艺尺寸SRAM器件总剂量效应的影响规律。针对0.25μm工艺SRAM器件开展了不同Burn-in温度影响器件抗辐射能力的实验研究,得到了器件抗辐射性能与Burn-in温度之间的关系。结果表明,SRAM器件的工艺尺寸越小,抗总剂量能力越强,且受Burn-in的影响越小;Burn-in时的温度越高,对器件的抗总剂量水平影响越大。更多还原

【Abstract】 The influence of Burn-in on the total-ionizing-dose(TID)effect of SRAM device was investigated.SRAM devices of three different feature sizes were selected and irradiated by 60 Co source with or without pre-irradiation Burn-in.Some parameters for radiation effect of SRAM device such as upset data,were measured,and the influence on the TID effect of different feature size SRAM devices with or without pre-irradiation Burn-in was obtained.The influence of different temperature Burn-in on radiationresistant capability of SRAM device was studied for 0.25μm SRAM device.The results show that the smaller the device feature size is,the better the radiation-resistant capability of SRAM device is and the weaker the influence of Burn-in is.And the higher Burn-in temperature is,the more serious the influence of Burn-in on the total-dose radiation effect is.更多还原