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硅烯与金属界面以及硅烯器件

Silicene on Metal Substrates and Silicene Nanomesh

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【作者】 吕劲

【Author】 Jing Lu;State Key Laboratory of Mesoscopic Physics and Department of Physics,Peking University;Collaborative Innovation Center of Quantum Matter;

【机构】 北京大学物理学院人工微结构与介观物理国家重点实验室量子物质科学协同创新中心

【摘要】 根据对硅烯在一系列金属(Ir,Cu,Mg,Au,Pt,Al,and Ag)上的第一性原理计算,发现硅烯和金属都有非常强的能带杂化,导致硅烯狄拉克锥无一例外被破坏掉。然而,通过在硅烯和这些金属之间插入碱金属原子,狄拉克又会被重新恢复。硅烯和石墨烯一样没有能隙,不适合做晶体管。但是通过挖孔形成的硅烯纳米网,可以打开一个最大0.7 eV的能隙。量子输运模拟显示,利用硅烯纳米网构造的亚10-nm晶体管,其开态电流和亚阈值摇摆均超过实验上已经得到的高级硅器件和纳米碳管器件。

【Abstract】 Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir,Cu,Mg,Au,Pt,Al,and Ag substrates.The destroyed Dirac cone of silicene,however,can be effectively restored with linear or parabolic dispersion by intercalating alkali metal atoms between silicene and the metal substrates.Similar to graphene,zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility.A band gap is opened in silicene nanomesh when the width W of the wall between the neighboring holes is even,and the size of the band gap increases with the reduced W form first-principles calculations.Quantum transport simulation reveals that sub-10 nm silicene nanomesh FETs outperform the existing sub-10 nm advanced Si devices and carbon nanotube devices.

【关键词】 硅烯界面器件
  • 【会议录名称】 中国化学会第29届学术年会摘要集——第36分会:纳米体系理论与模拟
  • 【会议名称】中国化学会第29届学术年会
  • 【会议时间】2014-08-04
  • 【会议地点】中国北京
  • 【分类号】O627.41
  • 【主办单位】中国化学会
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