【作者】 李春雷； 庄大明； 张弓； 栾和新； 刘江； 宋军；

【Author】 LI Chun-lei;ZHUANG Da-ming;ZHANG Gong;LUAN He-xin;LIU Jiang;SONG Jun;Department of Mechanical Engineering,Tsinghua University;

【机构】 清华大学机械工程系；

【摘要】 本文采用预制膜硒化法制备CIGSe薄膜,考察了在520℃~560℃范围内的硒化温度对CIGSe薄膜结构和成分的影响。采用XRD和XRF检测方法分析了CIGSe薄膜的结构,采用Raman检测方法分析了CIGSe薄膜的成分,利用霍尔效应测试了不同硒化温度下制备的CIGSe薄膜的电阻率和迁移率。结果表明:采用预制膜硒化法制备的CIGSe薄膜主要由CuInSe2、ODC(CuIn3Se5等)、Cu2-xSe、CuSe相组成,硒化温度的改变不会影响CIGSe薄膜的成分。硒化温度升高,薄膜中ODC和Cu2-xSe相增加,薄膜的电阻率增加,载流子迁移率减小。更多还原

【Abstract】 As the absorber layer in the CISe-based solar cell CIGSe thin film was prepared by precursor-selenization method.we focused on the influence of selenization temperature on the properties of CIGSe.We analyzed phase structures and compositions of CIGSe thin films with different selenization temperatures by means of XRD Raman and XRF,respectively.Resistivities and carriers mobilities were also characterized based on Hall Effect.The results show that CIGSe thin films as-grown consist mainly of CuInSe2 ODC(CuIn3Se5 et al) Cu2-xSe and CuSe phases.As selenization temperature rises ODC and Cu2-xSe phases increase,to increase the resistivity of CIGSe while the carrier mobility of CIGSe decreases.更多还原