【作者】 高尚； 连洁； 宋平； 马铮； 王晓； 吴仕梁；

【Author】 Gao Shang,Lian Jie,Song Ping,Li Ping,Ma Zheng,Wang Xiao,Wu Shiliang (Shandong University Shandong Jinan 250100)

【机构】 山东大学信息科学与工程学院光电工程系；

【摘要】 使用等离子增强型化学沉积法(PECVD)制备SiO2薄膜具有诸多优点。如何减少产物中的杂质元素以获得更高质量的SiO2薄膜是一个很值得研究的问题。此次实验使用PECVD法在砷化镓衬底上制备二氧化硅薄膜。通过X射线光电子能谱(XPS)分析了衬底温度变化情况下各元素含量的变化,发现杂质元素碳的浓度随着衬底温度的升高大大降低。通过对氮元素的深入分析,发现产物中氮元素主要以Si-N键和N-H键两种方式存在。随着衬底温度的升高,产物中氮化硅的含量也随之降低。通过椭偏测量发现随着衬底温度的提高,二氧化硅薄膜的折射率呈上升趋势。由上述两点可知,随着衬底温度的上升,制备的二氧化硅薄膜的质量明显提高。更多还原

【Abstract】 Fabricatingsilica films byplasma enhancedchemical deposition(PECVD) is promising.However in the growth of silica films using PECVD,impurity elements are inevitable.Therefore how to reduce impurity elements is a problem which needs an urgent solution.In this work,we present the results of silica films which are fabricated by PECVD on GaAs substrates of different substrate temperatures.The films are analyzed by X-ray Photoelectron Spectroscopy (XPS).XPS results demonstrates that the ratio of silicon and oxygen of the reaction product is nearly 1:2 and the content of impurity elements in the product of this reaction with a higher substrate temperature is much lower than it is with a lower substrate temperature.And the refractive index of films rises with the increase of substrate temperature.These facts indicate that to gain better SiO 2 films,the substrate temperature should be high.更多还原