【作者】 孟坚； 高珊； 陈军宁； 柯导明； 孙伟锋； 时龙兴； 徐超；

【Author】 Meng Jian[1] Gao Shan[1] Chen Junning[1] Ke Daoming[1] Sun Weifeng[2] Shi Longxing[2] Xu Chao[1] ([1]Electronic Science and Technology School,Anhui University,Hefei 230039,PRC;[2]National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,PRC)

【机构】 安徽大学电子科学与技术学院； 东南大学国家ASIC工程中心；

【摘要】 分析了一个用阱作为耐高压漂移区的LDMOS的导通电阻,提出了带有场极板的高阻漂移区导通电阻的计算公式,改进了双扩散沟道导通电阻的计算公式。对一个LDMOS的例子做了计算,并将其与相同参数情况下用MEDICI软件模拟的结果作了对比。结果表明两者相差仅有5%,这说明所得公式可用于该类型LDMOS的分析和设计。更多还原

【Abstract】 A theory for an on-resistance of LDMOS using a well as a high resistance drift region was developed.The calculation formulas of a drift region on-resistance with field plate were given,and also a calculation formula of a double-diffused channel on-resistance was improved.An example was not only computed by formulas given by the paper,but also simulated by MEDICI program.It shows that the difference between two results was lower than 5%.It is verified that the formulas given by the paper can help to design and analyze LDMOS.更多还原