【作者】 明安杰； 陈大鹏； 欧文； 王玮冰； 何伟； 刘占峰；

【Author】 MING An-jie,CHEN Da-peng,OU Wen,WANG Wei-bing,HE Wei,LIU Zhan-feng (Integrated Circuit Advanced Process Center,Key lab of Microelectronics Device and Integration Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China )

【机构】 中国科学院微电子研究所集成电路先导工艺研发中心微电子器件与集成技术重点实验室；

【摘要】 研究了一种与CMOS工艺兼容的红外焦平面阵列,在SOI的顶层硅制作横向PN结敏感单元,多晶硅作为微像素支撑桥,氧化层和非晶硅填充的深槽作为XeF2释放阻挡结构。首先,对基于PN结温阻效应的器件的基本工作原理进行了分析探索;在此基础上,通过ISE-TCAD软件仿真得到了器件在300K～340K温度区间PN结正向I-V曲线,并通过参数提取得到了温度灵敏度;最后,采用SOI基底片在CSMC的0.8um标准CMOS工艺线成功进行流片,给出了器件制作及测试结果,测试和模拟结果吻合。更多还原

【Abstract】 This paper reports the implementation of an infrared focal plane array (IRFPA) using standard CMOS process. Our idea is to use an SOI wafer as a starting material and to fabricate single-crystal lateral pn-junction as temperature sensors in the thin SOI layer with support leg made by poly-silicon and deep trench filled with oxide and α-Si as XeF2 etch stopper. Firstly, electric characteristic of diode is simulated using ISE-TCAD software between 300 K and 340 K and the temperature sensitivity of the silicon pn-junction diode temperature sensor is derived. At last, the designed FPA is fabricated using stand 0.8 μm CMOS process of CSMC and the test results are given.更多还原