【作者】 张檀威； 黄辉； 蔡世伟； 黄永清； 任晓敏；

【Author】 ZHANG Tan-wei,HUANG Hui,CAI Shi-wei,HUANG Yong-qing,REN Xiao-min(Key Laboratory of Information Photonics and Optical Communications Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China)

【机构】 北京邮电大学信息光子学与光通信教育部重点实验室；

【摘要】 使用新型HQ-3型等离子体增强化学气相沉积(PECVD)设备在硅片(100)上沉积了氮化硅(SiNx)薄膜。在实验过程中系统地改变沉积的工艺参数(例如生长温度,射频功率,沉积时间以及反应气体流量比)。对实验所得氮化硅薄膜样品进行厚度和折射率的测试,根据测试结果讨论了上述工艺参数对氮化硅薄膜的性能影响(如生长速率以及折射率),最终通过对工艺参数进行优化获得了性能良好的氮化硅薄膜。更多还原

【Abstract】 Silicon nitride thin films were experimentally grown on silicon(100) by using PECVD.Growth parameters were changed in a series of experiments(for instance,growth temperature,RF power,growth time and gas flow rate).The silicon nitride thin film samples were tested to obtain the thickness and refractive index.The effect of above parameters on the quality of the silicon nitride thin film(for instance,growth velocity and refractive index) is discussed.Silicon nitride thin film with high quality is grown by optimizing the growth parameters.更多还原