【作者】 冷月华； 贾连希； 胡挺； 杨林； 杨华军；

【Author】 LENG Yue-hua1,2,JIA Lian-xi1,HU Ting1,YANG Lin1,YANG Hua-jun2(1.Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;2.College of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 中国科学院半导体研究所； 电子科技大学物理电子学院；

【摘要】 建立了一种直观的计算模型,采用三维全矢量虚位移束传输法对两种亚微米SOI(绝缘体上硅)光波导的模式特性及偏振特性进行了严格分析。矩形波导准TM模式的单模条件相比准TE模式更为宽松化,波导偏振相关性随尺寸降低而增大,正方形截面矩形波导模式双折射为零。脊形波导具有准TE单模单偏振范围,同时具有TM模式在波导侧壁发生模式转换并泄漏的固有特性,因而利于实现紧凑的单偏振器件。将结果与部分实验数据进行对比,表现出较好的一致性,为集成SOI光波导器件设计提供了可靠的参考依据。更多还原

【Abstract】 Proposed an intuitive model of submicron scale SOI(Silicon on Insulator)waveguides for modal and polarization analyzing.Characteristics for both rectangular and rib waveguides were calculated rigorously based on 3 dimensional full-vectorial imaginary distance beam propagation method(3D FV IDBPM).Broader region of single mode condition can be achieved for quasi-TM mode rather than quasi-TE mode in rectangular waveguide.The smaller cross section implies increased polarization dependence.Rectangular waveguide with square cross section delivers a zero modal birefringence.Only quasi-TE polarized single mode structure is achieved in rib waveguide.In addition,inherent leakage loss for the TM mode due to TM/TE mode conversion at the ridge boundary,leading to experimental single polarized devices.The simulation agrees well with existing experimental data.A general design recommendation for compact devices based on SOI optical waveguides is provided.更多还原