【作者】 吴颜明； 孙玲玲； 刘军；

【Author】 Yan-ming Wu Ling-ling Sun Jun Liu (Microelectronic CAD Center,Hangzhou Dianzi University,Hangzhou 310018,China)

【机构】 杭州电子科技大学微电子CAD所；

【摘要】 提出一个经验的GaAs HEMT大信号等效电路模型,沟道电流及偏置相关的本征电容模型方程高阶连续可导。模型考虑了自热效应引起的热功率耗散,以及跨导/漏导频率分布效应。测量和仿真的Ⅰ-Ⅴ、S参数以及功率特性对比结果表明模型达到了良好的精度。更多还原

【Abstract】 An empirical large-signal equivalent circuit model of GaAs HEMT is presented.Both of the equations for channel current and bias-dependence capacitors modeling are continuous and high order derivable.Power dissipation caused by self-heating effect and the frequency distribution of trans-conductor are described.Good accuracy of the model is obtained by comparing the measured and simulated I-V,S-parameters and power characteristics.更多还原