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双面硅条两维位置灵敏探测器的研制
Development of Double-Side Si Strip Bi-Dimension Position Sensitive Detectors
【作者】 谭继廉; 靳根明; 李占奎; 徐瑚珊; 李海霞; 韩励想; 魏计房; 戎欣娟; 王秀华; 卢子伟; 张宏斌; 王柱生; 祖凯玲; 鲍志勤; 李春艳; 龚威; 田大宇; 于民; 王金延; 张录;
【Author】 TAN Ji-lian, JIN Gen-ming, LI Zhan-kui, XU Hu-shan, LI Hai-xia, HAN Li-xiang, WEI Ji-fang RONG Xin-juan, WANG Xiu-hua, LU Zi-wei, ZHANG Hong-bin, WANG Zhu-sheng, ZU Kai-ling, BAO Zhi-qin, LI Chun-yan and GONG wei (Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000) TIAN Da-yu, YU Min, WANG Jin-yan, and ZHANG Lu (Institute of Microelectronics, Peking University, Beijing 100871)
【机构】 中国科学院近代物理研究所; 北京大学微电子研究院;
【摘要】 介绍了在核物理和高能物理实验研究中使用的新型探测器‐‐双面硅条两位位置灵敏探测器的结构,工作原理,制备工艺及测试结果。该探测器的灵敏面积为50×50mm2,前面和背面都被分为相等宽度的16条(每条的面积为50×3mm2),在微电子工艺线上采用平面工艺和离子注入技术制备。在-25伏偏压下,各条的反向漏电流都<10nA,对前面16条的能量分辨进行了初步测量,得到2.2%的能量分辨率(对5.486MeVα-粒子)。
【Abstract】 The structure, The operation principle , The fabrication process and The measurement results of a new type of detector—double sided Si strip detector used for nuclear physics and high energy physics have been described in this paper. This detector has a sensitive area of 50×50 mm2, both front side and back side were divided into 16 strips with equal width, each strip has a sensitive area of 50×3 mm2. This detector was fabricated by using planar technology and ion implantation technique, on microelectronics technology line. The reverse leakage current of each strip is small than 10 nA under bias voltage of 25 volts. The energy resolution of each strip on front side is about 2.2% for 5.486 MeV α-particles.
【Key words】 planar technology; double sided Si strip detector; reverse leakage current; energy resolution;
- 【会议录名称】 第十五届全国核电子学与核探测技术学术年会论文集
- 【会议名称】第十五届全国核电子学与核探测技术学术年会
- 【会议时间】2010-08-13
- 【会议地点】中国贵州贵阳
- 【分类号】O572.212
- 【主办单位】中国电子学会核电子学与核探测技术分会、中国核学会核电子学与核探测技术分会