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Mg掺杂对Zn1-xMgxO薄膜结构和光电性质的影响

Effect of Mg content on structural,optical,and electrical properties of Zn1-xMgxO thin films

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【作者】 黄桂娟孔春阳秦国平阮海波

【Author】 HUANG Gui-juan,KONG Chun-yang,QIN Guo-ping,RUAN Hai-bo (College of Physics and Electrical Engineering,Chongqing Normal University,Chongqing 400030,China)

【机构】 重庆师范大学物理与电子工程学院

【摘要】 利用射频磁控溅射法在石英玻璃衬底上制备了不同掺杂浓度的Zn1-xMgxO(0≤x≤0.09)薄膜,借助X射线衍射(XRD)、透射谱测试、霍耳测试等手段对ZnO薄膜的结构及光电性质进行了研究。实验结果表明,所制备的薄膜均具有轴择优取向,随着Mg浓度的增大,(002)峰向大角度方向移动,在整个可见区有较高的透射率(≥80%),且光吸收边明显蓝移。考虑导带上移引起施主缺陷离化能的增大,给出了载流子浓度随Mg掺杂含量不同的变化关系,计算结果与实验符合较好。此外,Mg含量达到9%时,薄膜的导电性能极弱,这很可能与施主缺陷离化能的相对增加和和大量杂质散射相关。

【Abstract】 Zn1-xMgxO(0≤x≤0.09) films are fabricated on quartz glass substrates by radio frequency(RF) magnetron sputtering technique.The influence of varying Mg composition on the structure,optical and electrical properties of the Zn1-xMgxO films are investigated by X-ray diffractometer(XRD),optical transmission measurement, and Hall measurement.It is found that all the films show good crystallization with c-axis orientation and a high optical transparency(≥80%) in the visible region.A blue shift in absorption edge indicates that the band gap increased as the increase of Mg content.Considering the conduction-band shifts to higher energy and increasing the activation energy of the defect donor states,the relationship between carrier concentration and Mg content is calculated,which is in agreement with the consequence of Hall measurement.In addition,the conductivity become weak drastically when Mg composition ratio up to 0.09 mainly due to the increasing activation energy of the defect donor states and a mass of impurity scattering.

【基金】 重庆市自然科学基金资助项目(AC4034)
  • 【会议录名称】 第七届中国功能材料及其应用学术会议论文集(第6分册)
  • 【会议名称】第七届中国功能材料及其应用学术会议
  • 【会议时间】2010-10-15
  • 【会议地点】中国湖南长沙
  • 【分类号】O484.4
  • 【主办单位】中国仪器仪表学会仪表材料分会、重庆仪表材料研究所、中南大学、《功能材料》期刊社
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