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石墨缓冲层对有机电致发光器件性能的影响

Influence of the graphite buffer layer on performance of organic light-emitting diodes

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【作者】 姚宁邢宏伟穆慧慧常立红崔娜娜王英俭张兵临

【Author】 YAO Ning~(1,2),XING Hong-wei~2,MU Hui-hui~2,CHANG Li-hong~2,CUI Na-na~2, WANG Ying-jian~1,ZHANG Bing-lin~2 (1.Hefei Institute of Optics and Precision Mechanics of CAS,Hefei 230031,China; 2.Department of Physics and Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University,Zhengzhou 450052,China)

【机构】 中国科学院安徽光学精密机械研究所郑州大学物理工程学院材料物理教育部重点实验室

【摘要】 采用磁控溅射法制备石墨薄膜作为OLED器件阳极缓冲层,研究了石墨缓冲层厚度对OLED器件性能的影响。研究发现,石墨缓冲层可以降低ITO阳极表面粗糙度,从而改善空穴传输层与阳极的界面接触提高空穴注入效率,使得含有石墨缓冲层的器件性能明显优于无石墨层的器件;适当厚度的石墨层使器件的开启电压从6.4V降低至3.7V,器件的电流效率从0.73cd/A提高到0.98cd/A,同时器件的耐压性也有所提高。

【Abstract】 The different thicknesses of graphite by DC reactive magnetron sputtering used as anode buffer layer, the influence of thickness on the performance of the OLEDs device was studied.The results indicate that the roughness of the electrode was reduced by the graphite film and a more homogeneous adhesion of the hole transporting layer to the anode,and the devices with graphite show better performance than that of the device without graphite layer.The turn-on voltage of the device with appropriate graphite film thickness can be effectively reduced compared to the device with ITO anode,from 6.4 V to 3.7V,and the current efficiency can be increased, from 0.73cd/A to 0.98cd/A.and the stability of the device was also improved.

  • 【会议录名称】 第七届中国功能材料及其应用学术会议论文集(第2分册)
  • 【会议名称】第七届中国功能材料及其应用学术会议
  • 【会议时间】2010-10-15
  • 【会议地点】中国湖南长沙
  • 【分类号】TN383.1
  • 【主办单位】中国仪器仪表学会仪表材料分会、重庆仪表材料研究所、中南大学、《功能材料》期刊社
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