【作者】 王海卫； 张新； 李沛旭； 汤庆敏； 李树强； 夏伟； 徐现刚；

【Author】 Wang Haiwei~1,Zhang Xin~1,Li Peixu~(1,2),Tang Qingmin~1, Li Shuqiang~(1,2),Xia Wei~(1,2),Xu Xiangang~(1,2) (1.Shandong Inspur Huaguang Optoelectronics Co.,Ltd.,Jinan 250100,China; 2.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)

【机构】 山东华光光电子有限公司； 山东大学晶体材料国家重点实验室；

【摘要】 利用MOCVD生长Mg掺杂的AlGaInP材料,研究了Mg掺杂特性,在此基础生长了AlGaInP/GaInP 650 nm大功率量子阱激光器。通过采用Zn扩散无吸收窗口技术,制作出150μm条宽1 200μm腔长的器件。20℃时,连续电流条件下测试其斜率效率达1.10 W/A,阈值电流560 mA,最大输出功率超过4.8 W。器件激射波长658 nm,光谱半峰宽(FWHM)只有1.2 nm,寿命超过5 000 h。更多还原

【Abstract】 Mg-doped AlGaInP material was grown by MOCVD and the properties were studied,on the basis of which high-power AlGaInP/GaInP 650 nm quantum well laser was fabricated.Through Zn-diffusion approach,a no absorption structure was achieved,thus a laser diode with 150μm stripe width and length of 1200μm was manufactured.Under the conditions of 20℃and continuous current,the slope efficiency and threshold current are 1.10 W/A and 560 mA,respectively,and the maximum light output power is higher than 4.8W.The red-emitting wavelength is approximately 658 nm,the FWHM is only 1.2 nm,and these laser diodes operate stably for 5 000 h.更多还原