【作者】 邬小鹏； 孙利杰； 钟泽； 徐小秋； 林碧霞； 傅竹西；

【Author】 Wu Xiaopeng,Sun Lijie,Zhong Ze,Xu Xiaoqiu,Lin Bixia,Fu Zhuxi (Department of Physics,University of Science and Technology of China,Hefei 230026,China)

【机构】 中国科学与技术大学物理系；

【摘要】 采用射频磁控溅射用x=0.00～0.45的Mg_xZn_1-xO陶瓷靶在Si（100）和石英衬底上生长Mg_xZn_1-xO薄膜。采用X射线衍射谱（XRD）、透射谱和光电导谱对样品进行表征。结果表明用Mg_xZn_1-xO薄膜在x≤0.325时具有单一（002）取向的六方结构,其禁带宽度E_g随x增加而增加,薄膜表面在入射光能量大于禁带宽度时有光电响应,并且在x=0.325时得到了禁带宽度在4.9 eV的Mg_xZn_1-xO薄膜。在x>0.325时出现立方相结构,禁带宽度有所减少,说明此时已为混相薄膜。更多还原

【Abstract】 Mg_xZn_1-xO thin films were grown by radio frequency magnetron sputtering on Si （100） substrates and quartz substrates which used x = 0.00 - 0.45 Mg_xZn_1-xO target.The thin films were characterized with X-ray diffraction spectrum,tranmission spectrum and photoconduction spectrum.The results show that Mg_xZn_1-xO thin films have only one orientation（002） of the Mg_xZn_1-xO hexagonal structure and the band-gap energy are increased with x and have surface photoconduction while x≤0.325,and the band gap energy turns to 4.9 eV as x = 0.325. There is a mixed hexagonal and cubic phase for Mg_xZn_1-xO films when x>0.325.更多还原