【作者】 谢自力； 张荣； 崔旭高； 陶志阔； 修向前； 刘斌； 李弋； 傅德颐； 张曾； 宋黎红； 崔影超； 韩平； 施毅； 郑有炓；

【Author】 Xie Zili,Zhang Rong,Cui Xugao,Tao Zhikuo,Xiu Xiangqian,Liu Bin,Li Yi, Fu Deyi,Zhangzeng,Song Lihong,Cui Yingchao,Han Ping,Shi Yi,Zheng Youdou (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physicals,Nanjing University,Nanjing 210093,China)

【机构】 南京大学物理系江苏省光电功能材料重点实验室；

【摘要】 利用金属有机物化学气相沉积法在蓝宝石衬底上生长了Mn掺杂GaN基稀磁半导体材料。原子力显微镜研究表明,少量的Mn在样品表面起到活性作用。X射线衍射和喇曼散射研究表明,当Mn的掺杂浓度很低(<2.7%)时并没有观察到第二相的出现,当Mn的掺杂浓度达到3.9%时观察到了第二相。采用光学测试得到了由于Mn杂质引入杂质能级和缺陷而产生一个很宽的发射和吸收谱。更多还原

【Abstract】 The Ga_1-xMn_xN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low（<2.7%） Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.更多还原