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AlxGa1-xN/GaN异质结构中2DEG的塞曼自旋分裂
Zeeman Spin Splitting of 2DEG in AlxGa1-xN/GaN Heterostructures
【作者】 唐宁; 沈波; 韩奎; 卢芳超; 许福军; 秦志新; 张国义;
【Author】 Tang Ning,Shen Bo,Han Kui,Lu Fangchao,Xu Fujun,Qin Zhixin,Zhang Guoyi (State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Peking University,Beijing 100871,China)
【机构】 北京大学人工微结构和介观物理国家重点实验室;
【摘要】 通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al0.24Ga0.76N/GaN异质结构中二维电子气(2DEG)的磁电阻振荡现象。在强磁场下观察到了表征2DEG塞曼自旋分裂的舒勃尼科夫-德哈斯(SdH)振荡的分裂峰。通过分析SdH分裂峰的位置,获得了塞曼自旋分裂能量和g*的大小,发现由于交换相互作用,g*比g0有了显著的增加,同时g*随着磁场的增大而增大,说明随着磁场的增大,电子与电子的交换相互作用增强。
【Abstract】 Magnetoresistance oscillations of the two-dimensional electron gas(2DEG) in unintentionally doped Al0.24Ga0.76N/GaN heterostructures have been investigated by means of magneto-transport measurements at low temperatures and high magnetic fields.The spin-split peaks of the Shubnikov-de Haas(SdH) oscillations are observed at high magnetic fields,which are attributed to the Zeeman spin splitting of the 2DEG.The spin splitting energy and g* are obtained by measuring the positions of the pairs of spin-split SdH maxima.It is found that g* is enhanced over its bulk value in GaN due to the exchange interactions.Moreover,the g* increase with an increase in magnetic field,indicating that many-body electron-electron interactions become stronger as the magnetic field increases.
【Key words】 AlxGa1-xN/GaN heterostructures; two-dimensional electron gas; spin;
- 【会议录名称】 第十五届全国化合物半导体材料,微波器件和光电器件学术会议论文集
- 【会议名称】第十五届全国化合物半导体材料,微波器件和光电器件学术会议
- 【会议时间】2008-11-30
- 【会议地点】中国广东广州
- 【分类号】TN304.2
- 【主办单位】中国电子学会半导体与集成技术分会、电子材料分会