【作者】 季雅静； 秦会斌； 叶丽云；

【Author】 JI Ya-jing,QIN Hui-bin,YE Li-yun(School of Electronics & Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

【机构】 杭州电子科技大学电子信息学院；

【摘要】 用直流磁控溅射方法制备了以Ta为缓冲层的Ni80Fe20薄膜。研究了NiFe层厚度对薄膜电阻变化量ΔR的影响。实验发现ΔR随NiFe厚度先变大后减小,最大约为0.3Ω,当NiFe厚度达到140nm后ΔR趋于饱和。其变化的原因是NiFe厚度影响着晶粒尺寸和表面粗糙度,进而影响着电子的散射,使ΔR呈现上述的变化趋势。更多还原

【Abstract】 A series of Ta/ NiFe thin films with different thickness have been prepared by using DC magnetron sputtering.The effect of thickness of NiFe on the AMR value of the films has been studied.The results show that the ΔR value of the films reaches a maximum value about 0.3Ω at the thickness about 140nm,then decreases with the increase of NiFe thickness.The reason is that the thicker films introduce the larger grain size and the lower surface roughness,which will weaken the scattering of the electrons,evoke the change trend as above.更多还原