Preparation and Characterization of Mg2Si Thin Films Grown by Magnetron Sputtering

【作者】 肖清泉；

【Author】 XIAO Qing-quan,XIE Quan,YU Zhi-qiang,ZHAO Ke-jie (Guizhou University,Guiyang 550025,China)

【机构】 中国贵州省贵阳市花溪区贵州大学北校区理学院；

【摘要】 <正>Ecologically friendly semiconducting Mg2Si thin films were grown by magnetron sputtering technique on Si(100) substrates.The influence of annealing temperature and annealing time on the quality of Mg2Si films was discussed.XRD patterns and SEM images indicate that the optimum annealing temperature is about 500℃,and optimum annealing time is about 10 h.These results suggest that high quality Mg2Si thin films can be obtained by magnetron sputtering technique on the silicon substrates.更多还原

【Abstract】 Ecologically friendly semiconducting Mg2Si thin films were grown by magnetron sputtering technique on Si(100) substrates.The influence of annealing temperature and annealing time on the quality of Mg2Si films was discussed.XRD patterns and SEM images indicate that the optimum annealing temperature is about 500℃,and optimum annealing time is about 10 h.These results suggest that high quality Mg2Si thin films can be obtained by magnetron sputtering technique on the silicon substrates.更多还原