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强束流离子注入引起的温升研究
A rise in temperature induced by ion implantation of high beam current density
【Author】 LI Song YU Yi-chao YANG Jian-hua LUO Da-feng (Nantong University,Jiangsu 226007,China)
【机构】 南通大学;
【摘要】 采用绝热辐射模型,给出了不同束流密度下的钼离子注入铝时的平衡靶温以及温度与时间所满足的关系,并做了定量分析。研究结果表明:在不同束流密度离子注入和不同表面发射率下,理论计算结果和实验测量结果还有约13-19%的差距。最后,对导致差距的可能原因做了分析,进一步对采用绝热模型计算所存在的缺陷做了修正,并对靶温随深度的分布进行了定性分析。
【Abstract】 In the model of thermal resistance and irradiation,the target of balance temperature as well as the relation between the temperature and the time in the case of different current densities of Mo ions which are implanted into Al is calculated.At the same time,the results of calculation are analyzed in quantum.It shows that,for different current densities of ion implantation and surface emissivity,there are thirteen to nineteen percentages differerces between the theoretical and experimental results.Therefore,the causes which might lead to differerces are analyzed.Furthermore,the defect existing in the model is explained and modified.In this base,the depth profile of the target temperature is analyzed in character.
- 【会议录名称】 第九届真空冶金与表面工程学术会议论文摘要集
- 【会议名称】第九届真空冶金与表面工程学术会议
- 【会议时间】2009-08-24
- 【会议地点】中国辽宁沈阳
- 【分类号】TF13
- 【主办单位】中国真空学会真空冶金专业委员会(Vacuum Metallurgy Committee of Chinese Vacuum Society)、沈阳市真空学会(ShenYang Vacuum Society)