【作者】 高晖； 张华明； 罗顺中； 宋宏涛； 刘国平；

【Author】 Gao Hui~~(1*) Zhang Hua Ming Luo Sun Zhong Song Hong Tao Liu Guo Ping (Institute of Nuclear Physics and Chemistry,China Academy of Engineering Physics,Mianyang 621900,China)

【机构】 中国工程物理研究院核物理与化学研究所；

【摘要】 本文利用Monter-Carlo方法,模拟低能一维平面电子束在本征、不同掺杂类型、掺杂浓度下的单晶Si中能量沉积分布情况。采用电子顺磁共振（EPR）技术测量了（111）晶向、两种掺杂类型下的掺杂浓度分别为1×10¹⁵cm^-3、1×1O¹⁷cm^-3的单晶硅片在一定电子注量下辐照前后缺陷顺磁吸收谱,比较了样品辐照前后缺陷顺磁中心强度的变化,并用X光电子能谱（XPS）对Si-SiO₂系统原子化学态的变化进行分析。结果表明,相比于P型Si,N型Si、特别是高掺杂的N型Si,在低能电子一定注量下,界面区内易引起辐射感生缺陷,主要来自于键合于磷的非桥联氧对空穴的诱捕作用,表现为POHC中心明显的变化,P_2P芯能级谱突变。并根据理论和实验结果,对电子能量沉积、电离缺陷和辐照效应间的相互关系进行了分析。更多还原

【Abstract】 In this paper,the energy depostion for electron beams with low energy on Si specimens was calculated by Monter-Carlo method.In View of electron Paramagnetic resonance（EPR）technique,the investigation of the effects of variations in dopant type and concentration on EPR signals was carried out by using P-type and N-type （111）silicon wafers of concentration 1×10¹⁵cm^-3and 1×l0¹⁷cm^-3before and after the irradiation of electrons.The changes of intensity of defect paramagnetic centers before and after irradiation of electron were compared.The chemical states of Si-SiO₂ system were determined by X-ray photoelectron spectroscopy（XPS）.The results clearly indicate that the effects of dopant variations（type and concentration）are of obvious difference.Compared with P type silicon,specially,N type silicon with high dopant concentration tends to produce defects at interface under low energy electron irradiation with certain flux,which arise from the hole trapped on a non-bridging oxygen atom bonded to P.It is embodied in the form of distinct changes of POHC intensity and P_2Pbinding energy.According to the theory and experimental data,the relationship among electron energy deposition,ionizing damage,radiation effect was analyzed and discussed.更多还原