【作者】 郭卫； 张维佳； 吴倞； 赵而敬； 沈燕龙； 张静；

【Author】 GUO Wei, ZHANG Wei-jia, WU Jing, ZHAO Er-jing, SHEN Yan-long, ZHANG Jing (Center of Condensed Physics & Material Physics, School of Physics and Nuclear Engineering, Beihang University, Beijing 100191, China)

【机构】 北京航空航天大学物理与核能工程学院凝聚态物理与材料物理研究中心；

【摘要】 采用等离子体增强化学气相沉积工艺(PECVD),在工作气压约300Pa下,制备了优质的本征非晶态薄膜(I层)和掺磷的纳米硅薄膜(N层)。并将制备的掺磷纳米硅薄膜应用于纳米硅薄膜太阳能电池,分析讨论了膜层的厚度、晶态比、透射谱等对电池性能的影响,初步制备出了纳米硅薄膜太阳能电池,并在中科院电工所国家太阳能电池测试中心测得电池开路电压(Voc)为555.2mV,短路电流(Isc)为25.12mA/cm2,光电转换效率为6.6%。更多还原

【Abstract】 This paper adopted the technology of plasma-enhanced chemical vapor deposition (PECVD) and worked at pressure (≈ 300Pa) to make the preparation of a high-quality intrinsic amorphous film (I layer) and phosphorus-doped nc-Si thin film (N layer) .Then the phosphorus-doped nc-Si thin film was applied to the nano-silicon thin film solar cell and the paper analyzed the impact of film thickness, crystalline ratio, transmission spectrum on battery performance,and prepared the initial nano-silicon thin film solar cells. The preparation of the battery was tested in state solar cell testing center of Institute of Electronic by the Chinese Academy of Sciences, in which the circuit voltage(Voc) is 555.2mV, the short-circuit current(Isc) is 25.12mA/cm2 and the photoelectric conversion efficiency is 6.6%.更多还原