【作者】 季欣； 董元伟； 徐伟；

【Author】 JI Xin, DONG Yuan-wei, XU Wei (Department of Materials Science, Fudan University, Shanghai 200433,China)

【机构】 复旦大学材料科学系；

【摘要】 报导了利用Cu和NH4SCN的固-液界面反应在铜表面原位生长CuSCN薄膜的方法。使用激光拉曼光谱、X射线多晶衍射谱(XRD)和扫描电子显微镜(SEM)对CuSCN薄膜进行表征。实验证明,Al/CuSCN/Cu器件具备双极型的电存储特性,在脉冲电压下能够实现连续反复擦写,高低状态比达到104,并在长时间读电压下保持稳定,具备应用于非易失性存储器的潜力。更多还原

【Abstract】 A new approach towards in situ growth of CuSCN thin film on Cu substrate was reported through solid-liquid interface reaction between Cu surface and NH4SCN solution. The CuSCN film was tested by Raman spectra, X-ray diffraction (XRD) patterns and scanning electron microscopy (SEM). The as-fabricated Al/CuSCN/Cu device exhibited bipolar electrical memory characteristics with an ON/OFF ratio of 104, and could also be operated successively under pulse modes. The two resistance states could keep stable under long time read voltage. The Al/CuSCN/Cu device may promise its potential for nonvolatile memory application.更多还原