【作者】 陈长琦； 郭江涛； 王君； 朱仁胜；

【Author】 Chen Chang-qi Guo Jiang-tao Wang Jun Zhu Ren-sheng (Institute of Vacuum Science and Technology and Equipment,Hefei University of Technology,Hefei 230009,China)

【机构】 合肥工业大学真空科学技术与装备研究所；

【摘要】 掺杂 VO₂薄膜的相变特性决定了它具有广阔的应用前景。作者通过双靶反应共溅射的方法在玻璃基片上沉积掺钨 VO₂薄膜。用 X 射线电子能谱（XPS）对沉积的薄膜进行成分分析和 W 掺杂量的标定。针对不同掺钨量的薄膜,测量了薄膜电学转变和光学转变的热滞回线,并对曲线进行对比分析,讨论了掺钨量对薄膜相变特性的影响,并从晶体学角度对其进行解释。通过控制掺钨量,可以实现薄膜的相变温度τ_t 在17—65℃范围内自由调节。更多还原

【Abstract】 Doped VO₂ films are materials of wide application prospect for it’s properties of phase transition.W-Doped VO₂ films were doposited onto glass substrates by double targets magnetron sputtering.X-ray photoelectron spectroscopy（XPS） was used to analyze components of the deposited films and confirm the quantity of W.Thermal hysteresis loops of electrical switching and optical switching were measured with films of different W concentration.The loops were contrasted and analyzed.Properties of phase transition in films of different W concentration were discussed and interpreted from crystallography view.Phase transition temperature t_t of films can be modulated freely from 17℃ to 65℃ by controling W concentration in films.更多还原