【作者】 郭孝孝； 张法智； 徐赛龙； 崔兆慧； 段雪；

【Author】 Xiao-xiao Guo, Fa-zhi Zhang*, Sai-long Xu, Zhao-hui Cui, Xue Duan State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029

【机构】 北京化工大学化工资源有效利用国家重点实验室；

【摘要】 <正>随着超大规模集成电路器件集成度的提高,导线电阻R和电容C产生的RC延迟会有所上升,限制了器件的高速性能,而且增加能耗。开发新型的超低介电常数材料(k≤2.2)是解决这一问题的有效途径,而造孔是降低薄膜材料介电常数的常用方法。本文采用原位生长法在金属铝片表面合更多还原

【Abstract】 The miniaturization of integrated circuits generally results in problems with interconnect resistance-capacitance (RC) delays, signal crosstalk, and power consumption. To deal with these problems, a new dielectric material with very low dielectric constant (k) is required to replace the current interlayer dielectric: silicon dioxide (k≈4). It is admitted that further reduction in dielectric constant can only be achieved by introducing porosity into the materials, since air has the lowest dielectric constant of 1. We prepared a LDHs film by in-situ crystallization on pure aluminum substrate. The LDHs platelets were interlaced to each other with a vertical orientation, which produce random macropores. After being calcined at 500oC for 5 h, the film turned to be a metal-metal-oxides (MMO) film with the loss of hydroxy, water and CO2. By varying the crystallizing conditions of precursor, we created controllable interparticle pores, and thus achieve a tunable k-value MMO film in a low range.更多还原