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三元体系化学水浴法制备ZnS薄膜结晶性能的研究
Crystallization properties of ZnS films by chemical bath deposition in the ternary system of ammonia,hydrazine hydrate and citric acid
【作者】 王应民; 孙云; 蔡莉; 杜楠; 孙国忠; 李禾;
【Author】 WANG Ying-min~(1,2) SUN Yun~1 CAI Li~2 DU Nan~2 SUN Guo-zhong~1 LI He~2 (1.Institute of photoelectronic thin films devices & technology,Nankai University;Tianjin key laboratory of photoelectronic thin films devices & technology,Tianjin 300071,China;2.College of Materials Science & Engineering, Nanchang Institute of Aeronautical Technology,Nanchang 340063,China)
【机构】 南开大学光电子薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室; 南昌航空工业学院材料科学与工程学院;
【摘要】 太阳薄膜电池 ZnS 缓冲层一般以氨水为主络合剂、水合肼为辅助络合剂二元络合体系化学水浴法制备.实验发现以氨水为主络合剂、水合肼和柠檬酸为辅助络合剂三元体系制备的 ZnS 薄膜质量明显要比氨水、水合肼二元体系的 ZnS 薄膜好.薄膜表面更加光亮、平整,光透过率能得到明显提高.从实验现象和测试结果来看,随柠檬酸浓度增加,在反应溶液中无定形态白色沉淀明显减少,ZnS 薄膜结晶性能也得到明显提高,ZnS 薄膜光透过率升高.柠檬酸浓度为0.15mol/L 时,薄膜光透过率达到85%左右,完全满足太阳能电池的要求;继续增加柠檬酸的量,薄膜光透过率趋于一致,光透过率略有回落.
【Abstract】 ZnS thin films as buffer layers in thin films solar cell are usually deposited by chemical bath deposition in the binary system of ammonia and hydrazine hydrate.The results indicate that quality of ZnS films prepared in the ternary system of ammonia,hydrazine hydrate and citric acid are better than in the binary system of ammonia and hydrazine hydrate.With the increasing the concentration of citric acid in the solution,it is found the amount of amorphous precipitation in the reactive solution remarkably reduce,accordingly the surface roughness of ZnS films reduces and the transmission index of ZnS films can rise up.when the concentration of citric acid in the solution is 0.15 mol/L,transmission index of ZnS films rise up to 85% in the range of visible spectrum,it is suitable to fabricate solar cell,if continue to increasing the concentration of citric acid in the solution,transmission index of ZnS films tend to fall after a rise.
【Key words】 chemical bath deposition; zinc sulfide films; transmission spectra; citric acid;
- 【会议录名称】 第六届中国功能材料及其应用学术会议论文集(4)
- 【会议名称】第六届中国功能材料及其应用学术会议
- 【会议时间】2007-11
- 【会议地点】中国湖北武汉
- 【分类号】TB383.2
- 【主办单位】重庆仪器材料研究所、中国仪器仪表学会仪表材料分会、国家仪表功能材料工程技术研究中心