【作者】 张磊兢； 郭方敏； 叶宇诚； 朱自强；

【Author】 ZHANG Lei-jing GUO Fang-min YE Yu-cheng ZHU Zi-qiang (College of Information Sciences and Technology,East China Normal University,Shanghai 200062,China)

【机构】 华东师范大学信息学院；

【摘要】 介绍低阻硅基多孔硅作为低损耗衬底在射频集成电路(RFIC)无源器件上的应用,分别讨论了在 RFIC 中的传输线,移相器和电感等无源器件运用多孔硅衬底后性能和主要参数的改良变化,并从理论上分析变化的原因．多孔硅衬底大大降低了 RFIC 电路中传输线的损耗,使移相器的工作频率和相移量都发生变化．运用多孔硅衬底,回旋电感的最高 Q 增加了63%(16．8～ 27．4),最高响应频率增加了28%(15．2～19．4GHz)．结果表明多孔硅衬底在高频情况下完全能满足 RFIC 元件的要求．更多还原

【Abstract】 The paper introduce the applications of porous silicon substrate in RFIC non-source devices,discuss the performance and main parameter of the CPW,phase shifter and inductor after using PS as their substrate,respectively.PS has been a great helpful for low-loss CPW substrate,changed the phase shifter for both f0 and A~.For the inductor,an over 63% increase (from 16.8 to 27.4) in peak Q-factor and an about 28% increase (from 15.2 to 19.4 GHz) in resonance frequency are obtained.Porous silicon (PS) has been proved as a promising substrate material for RFIC devices in high frequency.更多还原