【作者】 张子立； 索红莉； 马麟； 刘敏； 李亚明； 赵福祥； 梁小涛； 赵跃； 施智祥； 周美玲；

【Author】 ZHANG Zi-li~1 SUO Hong-li~1 MA Lin~1 LIU Min~1 LI Ya-ming~1 ZHAO Fu-xiang~2 LIANG Xiao-tao~2 ZHAO Yue~1 SHI Zhi-xiang~2 ZHOU Mei-ling~1 (1.Key Laboratory of Advanced Functional Materials,Ministry of Education,China,College of Material Science and Engineering,Beijing University of Technology,Beijing 100022,China;2.College of Physics,Southeast University,Nanjing 210096,China)

【机构】 北京工业大学材料学院国家教育部功能材料重点实验室； 东南大学物理系；

【摘要】 分别制备了8%（质量分数）的 TiC 和5%（质量分数）的 SiC 掺杂的 MgB₂超导块材,并对比分析了这两种掺杂物对 MgB₂超导块材的性能影响．所有样品均在流动的 Ar 气保护下在不同退火温度下退火,研究发现 TiC 掺杂和 SiC 掺杂的 MgB₂样品的最优化工艺参数分别是900℃保温1h 和720℃保温1h．随后采用 XRD 和 SEM 分别对样品进行了相成份和微观结构的分析, 并采用 PPMS 测试了样品的磁滞回线并由 Bean 模型计算出了样品的临界电流密度．在4．2K,0t 下 TiC 掺杂的 J_c 值为1．0×10⁵A/cm²,而10K,0T 下 SiC 掺杂样品的 J_c 值为4×10⁵A/cm²．而且随着外加磁场的增加,SiC 掺杂 MgB₂样品的 J_c 值下降得比 TiC 掺杂的 MgB₂样品要缓慢很多,这表明了 SiC 掺杂比 TiC 掺杂更有利于改善 MgB₂在高场下的超导电性能．更多还原

【Abstract】 8wt% TiC doped and 5wt% SiC doped MgB₂ bulks were in-situ synthesized and the samples were sintered at various temperatures under the Ar atmosphere protection.The optimized sintering parameter for TiC doped MgB₂ sample was found to be 900℃ for 1h,and SiC doped one was 720℃ for 1h.The samples were analysised by the XRD,SEM and the magnetic J_c measurements.It was found that the J_c values of TiC doped samples were reached to 1.0×10⁵A/cm² at 4.2K in self field and SiC doped samples were reached to 4.0×10⁵A/cm² at 10K in the self field.Meanwhile,with the increase of the magnetic field,the J_c value in SiC doped MgB₂ sample was decreased slowly when comapred to that of TiC doped one,indicating that the SiC doping is more effective for the improvement of the critical current density in MgB₂ at higher magnetic field than that of the TiC doping.更多还原