【作者】 王领航； 张继军； 介万奇； 董阳春；

【Author】 WANG Ling-hang ZHANG Ji-jun JIE Wan-qi DONG Yang-chun (State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,China)

【机构】 西北工业大学凝固技术国家重点实验室；

【摘要】 研究了一种新型近红外光电探测材料碲铟汞 （MIT）晶体,利用垂直 Bridgman 法成功生长了 MIT 单晶,并采用 X-ray 衍射分析、UV-NIR-IR 光谱分析及 Hall 测试对晶体的形态结构及光电性能进行了检测。结果表明：MIT 晶体为缺陷闪锌矿结构,其在中远红外波段透过性能较好（＞50%）,并且随着波长的增大,透过增强．MIT 晶体为 n 型半导体,室温电阻率为 4．79×10²Ω·cm,载流子迁移率为4．6×10²cm²·V^-1·s^-1, 载流子浓度为2．83×10¹³cm^-3。较低的载流子浓度,有利于降低探测器的噪声及提高探测器的能量分辨率．更多还原

【Abstract】 A new semiconductor material of mercury indium teUuride（MIT）for near-infrared photodetectors was investigated.MIT single-crystal has been successfully grown by vertical Bridgman method and was characterized by means of X-ray analysis,UV-NIR-IR and Hall measurement.The results show that MIT crystal with defect zinc-blende structure is n type semiconductor with high transmittance（over 50%）in the middle and far infrared region.MIT.The resistivity,carrier concentration and carrier mobility at room temperature were 4.79×10²Ω·cm,2.83×10¹³cm^-3and 4.6×10²cm²·V^-1·s^-1,respectively.The low carrier concentration is beneficial to reduce noise of detectors and enhance the energy resolution of the devices.更多还原