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自偏压对PMMA基底上沉积的含氢非晶碳膜的影响(英文)

Effect of Bias Voltage on Hydrogenated Amorphous Carbon Film Deposited on PMMA Substrate

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【作者】 蔺增李明王凤巴德纯In-Seop Lee

【Author】 Lin Zeng Li Ming Wang Feng Ba Dechun In-Seop Lee (Vacuum and Fluid Engineering Research Center. Northeastern University, Shenyang 110004, China; State Key Laboratory of Plastic Forming Simulation and Die & Mould Technology, Wuhan, Hubei, 430074, China; Institute of Physics & Applied Physics, and Atomic-scale Surface Science Research Center, Yonsei University, Seoul 120 - 752, Korea)

【机构】 真空与流体工程研究中心,东北大学Institute of Physics & Applied Physics,and Atomic-scale Surface Science Research Center,Yonsei University,Seoul 120-752

【摘要】 分别用等离子体增强化学气相沉积和磁控溅射的方法在PMMA基底上沉积含氢非晶碳膜和硅膜以应用于生物医学领域。硅膜是用氩离子溅射硅靶制备,而非晶碳膜是以甲烷和氢气为反应气体在不同偏压下制备的。研究发现,所制备的碳膜是包含sp2和sp3两种结构的非晶体,与基底材料相比该碳膜在硬度和耐磨性能等方面有明显的提高。结果表明,该非晶碳膜的显微结构、机械和摩擦学特性均显著依赖于薄膜沉积过程中的所用的自偏压。

【Abstract】 Bilayered films composed of hydrogenated amorphous carbon (a-C:H) and silicon (Si) were prepared on the surface of polymethylmethacrylate (PMMA) substrates using plasma enhanced chemical vapor deposition (PECVD) and magnetically sputtering deposition for the applications in the biomedical industry. The deposition of the Si films were carried out by Ar+ sputtering silicon targets and the deposition of the a-C: H films were carried out using methane and hydrogen as reactive gases at different bias voltages. It was showed that the a-C: H films were amorphous with the structure of mixed sp2+sp3 bonding and exhibited an obvious improvement in hardness and wear resistance as comparing to the PMMA substrates. Furthermore, results indicate that the micro- struc-ture, mechanical and tribological properties of the a-C: H films strongly depend upon the bias voltage during synthesis.

  • 【会议录名称】 真空冶金与表面工程——第八届真空冶金与表面工程学术会议论文集
  • 【会议名称】第八届真空冶金与表面工程学术会议
  • 【会议时间】2007-06
  • 【会议地点】中国辽宁沈阳
  • 【分类号】TB383.2
  • 【主办单位】中国真空学会真空冶金专业委员会
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