【作者】 李晓溪； 贾天卿； 冯东海； 孙海轶； 徐世珍； 李成斌； 徐至展；

【Author】 X.X. Li, T.Q Jia, D.H. Feng, H.Y. Sun, S.Z. Xu, C.B. Li, Z.Z.Xu (Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China)

【机构】 中科院上海光学精密机械研究所强光光学实验室；

【摘要】 本文利用烧蚀面积与激光脉冲能量的线性关系确定了氟化锂的破坏阈值,同时研究了800nm超短脉冲激光作用下氟化锂的破坏阈值对激光脉宽的依赖关系,利用雪崩击穿模型,解释了实验结果,并探讨了氟化锂的烧蚀机理。利用泵浦-探针超快探测平台,研究了氟化锂破坏过程中导带电子密度的变化过程,并讨论了导带电子光吸收机制。更多还原

【Abstract】 Based on the linear dependence of laser pulse energy on the ablation area, the ablation threshold fluence of LiF crystal is calculated in this paper. Meanwhile the threshold fluence of LiF as a function of pulse duration is studied with ultra-short pulse laser. The experiment results agree well with the theory of avalanche mode. By use of pump-probe technic, we get the dependence of reflectivity of LiF crystal on delay time while irradiated by 800nm femtosecond laser. Finally we discussed the breakdown mechanism of LiF with femtosecond laser.更多还原