【作者】 王善忠； 姬荣斌； 巫艳； 许颐璐； 郭世平； 何力；

【Author】 S.Z.Wang R.B.Ji Y.Wu Y.R.Xu S.P.Guo L.He(Research Center for Advanced Materials and National Laboratory for Infrared Physics Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)

【机构】 中国科学院上海技术物理研究所,半导体薄膜材料研究中心,红外物理国家重点实验室；

【摘要】 本文报道 ZnSe 基Ⅱ-Ⅵ族宽带发光材料分子束外延系统的建立、p 型掺杂用等离子体活性氮源的研制、两性掺杂的 ZnSe 材料的生长。实验证明国产 MBE 设备能够自洽生长优质 ZnSe 单晶薄膜；用自制的等离子体活性氮源作受主掺杂剂,获得了 p-ZnSe 单晶薄膜,经 C-V 测量发现,[N_a]-[N_d]高达～5×10¹⁷·cm^-3；用国产粉末状 ZnCl₂源作施主掺杂剂,获得了 n-ZnSe 单晶薄膜,Hall 测量表明[n] 高达～2．3×10¹⁹·cm^-3。生长速度均控制在～0．5μm/h。更多还原

【Abstract】 ZnSe-hased Ⅱ-Ⅵ wide gap materials have attracted very much attention since the first demostration of a ZnSe- based blue/green laser diode in the summer of 1991 by 3M Corporation.For years,this area has been making great progresses over the world.Still,it is noticed that in China such a interesting project is just on the start-up phase and few results are reported.We report,in this paper,the foundation of a molecular beam epitaxy（MBE）system specially for the growth of ZnSe-based Ⅱ-Ⅵ widegap materials,the fabrication of a radiational frequency（r,f.）activated plasma nitrogen source for the p type doping of ZnSe-based materials,and the growth of high quality p-or n-ZnSe layers.The experiments have proved that FW-Ⅲ MBE system is suitable for the growth of p-ZnSe crystal films with high quality. The p-type ZnSe crystal films are available when our self-made plasma active nitrogen source is used as the p-doping source.It is found from the C-V results that[N_a]-[N_d]in p-ZnSe is high up to～5×10¹⁷·cm^-3.Adopting ZnCl₂ powder as n type dopants,we obtain n type ZnSe crystal films in which the electron concentration[n]is high up to～ 2.3×10¹⁹·cm^-3 examined by Hall method.In all the round of growth,the growth rate is controlled around～ 0.5μm/h.更多还原