【作者】 李辉； 曲轶； 张晶； 高欣； 薄报学； 刘国军；

【Author】 LI Hui QU Yi ZHANG Jing GAO Xin BO Bao-xue LIU Guo-jun (National Keg Laboratory on High Power Semiconductor Lasers.Changchun University of Science and Technology.Changchun,Jilin 130022,China)

【机构】 长春理工大学高功率半导体激光国家重点实验室；

【摘要】 采用非均匀阱宽多量子阱材料拓宽超辐射器件的输出光谱。利用大光腔结构制作出高功率、宽光谱、低发散角850nm 短波长超辐射发光二极管,在120mA 时器件半峰宽可达26nm,室温下连续输出功率达到6mW。与单模保偏光纤耦合输出功率达到1．0mW。更多还原

【Abstract】 Non-uniform well-thickness multi-quantum wells materials were adopted to widen the output spectrum of superluminescent diodes.850nm high-power,wide-spectrum,low-divergence superluminescent diodes with large optical cavity structure were fabricated.The spectral width(FWHM)of 26nm,continuous wave(CW)output power of 6mW were achieved at operating current of 120mA.The pigtail output power when coupled with single-mode polarization maintaining fiber reached 1．0mW.更多还原