【作者】 罗尹虹； 郭红霞； 陈伟； 姚志斌； 张凤祁； 郭刚； 苏秀娣； 陆虹；

【Author】 Luo YinHong Guo HongXia Chen Wei Yao ZhiBin Zhang FengQi (Northwest Institute of Nuclear Technology, Xi’an China, 710024) Guo Gang (The institute pf physics of CIAE, Beijin China, 102413) Su Xiudi Lu Hong (The 47th research institute of CETC, Shenyang China, 110032),

【机构】 西北核技术研究所； 中国原子能科学研究院物理研究所； 中国电子科技集团公司第四十七研究所；

【摘要】 2005年1月西北核技术研究所、中国原子能科学研究院物理研究所、中国电子科技集团公司第四十七研究所三家单位联合协作在国内首次开展了针对2k SRAM的重离子微束单粒子效应研究,取得了初步的实验结果,实验结果表明:截止NMOS和PMOS的漏区是SEU的敏感区域,但敏感度不同, 截上LNMOS漏区是单粒子翻转最敏感的区域。当存贮状态发生改变时,敏感区域发生改变,但敏感区基本呈对称结构。SRAM重离子微束实验方法的建立为今后更好的开展此项工作奠定了良好基础。更多还原

【Abstract】 Heavy ion microbeam study of single event effect in 2k SRAM was jointly carried out firstly in china by Northwest Institute of Nuclear Technology, The institute pf physics of CIAE and The 13th research institute of CETC. Preliminary experiment results were obtained. The experiment results showed that single event upset sensitive regions were at the drain regions of the n-channel transistor and p-channel transistor in the off-state. But sensitivity is different. The most sensitive region was at the drain regions of the n-channel transistor in the off-state. The upset sensitive regions changed after altering the logical level from logic low to high,but sensitive regions basically showed symmetrical structure. Heavy ion microbeam experiment method of single event effect in SRAM lays a foundation for the further research in the future.更多还原